Characteristics of Transparent Conducting Al-doped ZnO Films Prepared by Sputtering System

Title
Characteristics of Transparent Conducting Al-doped ZnO Films Prepared by Sputtering System
Authors
정성목김영환김성일유상임
Keywords
Transparent Conducting oxide; Al-doped ZnO; sputtering
Issue Date
2010-08
Publisher
IUMRS-ICEM 2010
Abstract
Transparent conducting oxide (TCO) films have been studied for various photo-electronic devices such as displays and solar cells. In the case of solar cell, Al-doped zinc oxide (AZO) film has been extensively investigated due to a large band gap, high transparency and low resistivity. And RF and DC sputtering system have been universally used for fabrication of AZO film. In this study, electrical and optical properties of Al-doped zinc oxide (AZO) films were carefully investigated. AZO thin films were deposited on soda-lime glass(SLG) substrates by RF and DC magnetron sputtering system with changing deposition parameters such as substrate temperature(R.T~350℃), power(50W~150W) and pressure. Resistivity and transmittance were measured by four point probe and spectrophotometer, respectively. RF magnetron sputtered AZO films were highly transparent in the wide wavelength region but showed large resistivity. However, transmittance of dc magnetron sputtered AZO film highly decreased with increasing substrate temperature in the near infra-red (NIR) region and resistivity of the film showed low value. And resistivity of all AZO films decreased with increasing substrate temperature at the substrate temperatures of R.T~270℃. This behavior was correlated with the crystal structure and microstructure. XRD results indicate that the AZO films were grown with a (002)-preferred orientation and the crystallinity of the film was enhanced with increasing substrate temperature. From the SEM images, the grain size of AZO film increased with increasing substrate temperature. Based on XRD patterns and SEM images, electrical and optical properties of transparent conducting Al-doped ZnO Films was analyzed. Details will be presented for a discussion.
URI
http://pubs.kist.re.kr/handle/201004/38473
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KIST Publication > Conference Paper
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