Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe

Title
Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe
Authors
장강우철박영욱정증현정두석유원종정병기
Keywords
phase change memory; multi-level cell; Ge-doped SbTe
Issue Date
2010-09
Publisher
European symposium on phase change and ovonic science 2010
Citation
, 147-149
Abstract
We demonstrate a high-speed multi-level cell (MLC) operation of a phase change memory with a Ge-doped SbTe (Ge-ST) for the first time using a conventional pore-type device structure as well as a conventional programming method. The Ge-ST was selected to have a low Sb/Te ratio of 1.6 (Ge-STL) rendering a diminished growth speed and a nucleation time relative to the case of a high Sb/Te ratio typical of fast growth-dominated crystallization. With a writing time of less than 100 ns, each of the 4 resistance levels separated from one another at least by the factor of 4 is shown to form reliably and stay with a low drift coefficient ranging 0.067 - 0.1. Ge-STL may thus be regarded as a promising material for high-speed MLC phase change memory applications.
URI
http://pubs.kist.re.kr/handle/201004/38538
Appears in Collections:
KIST Publication > Conference Paper
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