Study on the Self-assembled Process of Single-Walled Caborn Nanotubes (SWCNTs) Fabricated Using only photolithography and the Fabrication of SWNT-based Multi-channel Field Emission Transistors

Title
Study on the Self-assembled Process of Single-Walled Caborn Nanotubes (SWCNTs) Fabricated Using only photolithography and the Fabrication of SWNT-based Multi-channel Field Emission Transistors
Authors
김경헌김태근김선호변영태
Keywords
단일벽 탄소나노튜브; 전계효과트랜지스터; 포토리소그라피; SWNT; CNT; FET; Photolithography
Issue Date
2010-06
Publisher
새물리
Citation
VOL 60, NO 6, 591-594
Abstract
In this research, we investigated a selective assembly method of fabricating single-walled carbon nanotubes (SWNTs) on a silicon (Si) surface by using only a photolithographic process; then, we fabricated field-emission transistors (FETs). Photoresist (PR) patterns were made on a silicon-dioxide (SiO2)-grown Si substrate by using a photolithographic process. This PR-patterned substrate was dipped into a SWNT solution dispersed in dichlorobenzene (DCB). The PR patterns were removed by using aceton. As a result, selectively-assembled SWNT channels could be obtained between two electrodes (source and drain electrodes) without complicated chemical steps using octadecyltrichlorosilane (OTS). Finally, we successfully fabricated SWNT-based multi-channel FETs by using our novel self-assembly method.
URI
http://pubs.kist.re.kr/handle/201004/38548
ISSN
0374-4914
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KIST Publication > Article
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