Selectively self-assembled single-walled carbon nanotubes using only photolithography without additional chemical process
- Selectively self-assembled single-walled carbon nanotubes using only photolithography without additional chemical process
- 김경헌; 김태근; 이석; 전영민; 김선호; 변영태
- SWNT; Photolithography; OTS
- Issue Date
- 30th International Conference on the Physics of Semiconductors
- , 913-913
- silicon substrate. These SWNT arrays were made by using only a photolithographic process. Using this technique,
SWNTs could be absorbed on a Si substrate surface without complicated chemical steps. As a result, we
successfully fabricated multi-channel SWNT-based patterns. The unmanageable SWNTs couldbe easily absorbed
on the SiO2 surface. This is to advance one step further from conventional self-assembled process using
octadecyltrichlorosilane (OTS) and 3-aminopropyltriethoxysilane (APTES). This technique will provide a useful
basis for the implementation of nanostructure-based field emission transistor(FET) devices. This new process can
be used to form SWNT channels of FET devices.
SWNTs are being studied in various fieldsdue to their outstanding characteristics such as high mobility,
integration, detectionand semiconducting performance. They get attention as the material for increasing the density
unlike conventional silicon-based devices, and have large commercial potential. However, any accurate alignment
methods have not been developed for selective assembly yet and hence SWNT-based devices have not been
available commercially. Therefore simple self-assembled monolayer (SAM) process of SWNTs has been
Large-area electronic devices can be fabricated by low-temperature processes like a SAM process using OTS
and APTESsolution . But the reliability of the OTS solution is not stable. The OTS solution should be
maintained in conditions of a specific temperature and humidity. It can not be used in the next process repeatedly.
In addition, OTS solutions have risk of explosion when they react with water.
Here, we propose a novel method fabricating selectively self-assembled SWNT patterns without the use of the
OTS and APTES solution. Photoresist (PR) patterns are made by using photolithographic process on a Si substrate.
And these photoresist-patterned Si substrates are dipped into SWNT
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