Selectively self-assembled single-walled carbon nanotubes using only photolithography without additional chemical process

Selectively self-assembled single-walled carbon nanotubes using only photolithography without additional chemical process
SWNT; Photolithography; OTS
Issue Date
30th International Conference on the Physics of Semiconductors
, 913-913
silicon substrate. These SWNT arrays were made by using only a photolithographic process. Using this technique, SWNTs could be absorbed on a Si substrate surface without complicated chemical steps. As a result, we successfully fabricated multi-channel SWNT-based patterns. The unmanageable SWNTs couldbe easily absorbed on the SiO2 surface. This is to advance one step further from conventional self-assembled process using octadecyltrichlorosilane (OTS) and 3-aminopropyltriethoxysilane (APTES). This technique will provide a useful basis for the implementation of nanostructure-based field emission transistor(FET) devices. This new process can be used to form SWNT channels of FET devices. SWNTs are being studied in various fieldsdue to their outstanding characteristics such as high mobility, integration, detectionand semiconducting performance. They get attention as the material for increasing the density unlike conventional silicon-based devices, and have large commercial potential. However, any accurate alignment methods have not been developed for selective assembly yet and hence SWNT-based devices have not been available commercially. Therefore simple self-assembled monolayer (SAM) process of SWNTs has been researched. Large-area electronic devices can be fabricated by low-temperature processes like a SAM process using OTS and APTESsolution [1]. But the reliability of the OTS solution is not stable. The OTS solution should be maintained in conditions of a specific temperature and humidity. It can not be used in the next process repeatedly. In addition, OTS solutions have risk of explosion when they react with water. Here, we propose a novel method fabricating selectively self-assembled SWNT patterns without the use of the OTS and APTES solution. Photoresist (PR) patterns are made by using photolithographic process on a Si substrate. And these photoresist-patterned Si substrates are dipped into SWNT
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