Spin Transistor

Title
Spin Transistor
Authors
구현철장준연한석희엄종화
Keywords
spin transistor
Issue Date
2010-07
Publisher
물리학과 첨단기술; Physics & High Technology
Citation
VOL 19, 23-27
Abstract
Controlling not only the charges but also the spins of electrons, spintronic devices are expected to overcome the physical limitation of current Si-based electronics. The spin injected field effect transistor (FET), a lateral semiconducting channel with two ferromagnetic electrodes, lies at the heart of spintronics research. An essential ingredient of spintronic devices is a spin polarized current, which can be generated by current injected from ferromagnetic materials. Transition metal is a good source of spin polarized current, and exhibits room temperature operation due to the high Curie temperature. InAs-based high mobility channel is utilized for spin transport channel due to large spin-orbit interaction. This article reviews the demonstration of a spin FET operation which includes the gate voltage control of spin precession of injected spins.
URI
http://pubs.kist.re.kr/handle/201004/38560
ISSN
1225-2336
Appears in Collections:
KIST Publication > ETC
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