Dc current transport behavior in amorphous GeSe films

Title
Dc current transport behavior in amorphous GeSe films
Authors
정두석박군호임형광황철성이수연정병기
Keywords
chalcogenide; dc conductivity
Issue Date
2011-03
Publisher
Applied physics. A, Materials science & processing
Citation
VOL 102, NO 4, 1027-1032
Abstract
The dc electric conduction behavior of amorphous GeSe films sandwiched between Pt bottom electrode and various counter electrodes (Pt, Cr, and Ti) was examined in a voltage, as well as, a time domain. The time domain investigation identified time-dependent resistance change and relaxation. The voltage domain analysis revealed that the current transport in these metal-insulator-metal junctions is probably attributed to bulk-limited band-conduction due to delocalized charge carriers.
URI
http://pubs.kist.re.kr/handle/201004/38590
ISSN
0947-8396
Appears in Collections:
KIST Publication > Article
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