The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors

Title
The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors
Authors
정진욱이양두김영민박영욱최진환박태현Choi Dong Soo원송명한일기주병권
Keywords
Gas Sensor; NH3 sensor; Poly-3-hexylthiophene; Organic semiconductor; Organic thin-film transistor
Issue Date
2010-04
Publisher
Sensors and actuators. B, Chemical
Citation
VOL 146, NO 1, 40-45
Abstract
This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO2/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain–source current, as a function of time, when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH3 gas, with concentration ranging from 10 to 100ppm at room temperature in normal atmosphere. The measured drain–source current decreases rapidly with time after exposure to NH3 gas and the response characteristics of the drain–source current are seen to be higher for larger values of NH3 gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH3 gas.
URI
http://pubs.kist.re.kr/handle/201004/38694
ISSN
0925-4005
Appears in Collections:
KIST Publication > Article
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