Electrical and optical properties of Ga doped zinc oxide thin films deposited at room temperature by continuous composition spread

Title
Electrical and optical properties of Ga doped zinc oxide thin films deposited at room temperature by continuous composition spread
Authors
정근최원국윤석진김현재최지원
Keywords
Continuous composition spread; Transparent conducting oxide; Ga doped ZnO; Thin film
Issue Date
2010-08
Publisher
Applied surface science
Citation
VOL 256, NO 21, 6219-6223
Abstract
Ga doped ZnO (GZO) thin films were deposited on glass substrates at room temperature by continuous composition spread (CCS) method. CCS is thin films growth method of various GaxZn1−xO(GZO) thin film compositions on a substrate, and evaluating critical properties as a function position, which is directly related to material composition. Various compositions of Ga doped ZnO deposited at room temperature were explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 1.46×10−3 Ωcm and an average transmittance above 90% in the 550nm wavelength region were able to be formed at an Ar pressure of 2.66 Pa and a room temperature. Also, optimized composition of the GZO thin film which had the lowest resistivity and high transmittance was found at 0.8 wt.% Ga2O3 doped in ZnO.
URI
http://pubs.kist.re.kr/handle/201004/38741
ISSN
0169-4332
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KIST Publication > Article
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