Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe

Title
Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe
Authors
우철박영욱안형우이수연정증현정두석노광수정병기
Issue Date
2010-04
Publisher
Material Research Society
URI
http://pubs.kist.re.kr/handle/201004/38766
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE