Effect of trap density on the stability of SiInZnO thin-film transistor under temperature and bias-induced stress

Title
Effect of trap density on the stability of SiInZnO thin-film transistor under temperature and bias-induced stress
Authors
정유진전윤수이상렬
Keywords
thermal instability; SiInZnO; trap density
Issue Date
2011-02
Publisher
Electrochemical and solid-state letters
Citation
VOL 14, NO 2, H96-H98
Abstract
We fabricated high-performance thin film transistors (TFTs) with a silicon-indium-zinc-oxide (SIZO) channel layer deposited by rf-sputtering at room-temperature. The SIZO-TFTs passivated with PMMA showed a field effect mobility of 8 cm2/V•s and subthreshold swing of 90 mV/decade even the process temperature below 150℃. Si acted as a stabilizer and carrier suppressor in IZO-system. In addition, the temperature and bias-induced stability of SIZO-TFTs along with oxygen effects are experimentally studied.
URI
http://pubs.kist.re.kr/handle/201004/38796
ISSN
1099-0062
Appears in Collections:
KIST Publication > Article
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