The characteristics changing of HfInZnO TFT with process conditions by RF sputter
- The characteristics changing of HfInZnO TFT with process conditions by RF sputter
- 정다운; 정유진; 김승한; 전윤수; 이상렬
- Issue Date
- 한국전기전자재료학회 추계학술대회
- , 34-34
- We investigated hafnium-indium-zine oxide (HIZO) to investigate the effect of conditions to change RF power density and oxygen partial pressure on the structural, optical and electron properties. We fabricated the thin film transistors by RF magnetron sputtering method with different RF power condition and studied the effect of oxygen partial pressure on the subthreshold swing (S.S) and the field effect mobility(μFE) of HIZO TFTs. measurements performed on an HIZO transistor indicate the change of S.S in the transistor channel layer and electrical properties as varying O2 ratio and RF power, due to higher generation oxygen vacancy. We have observed and analyzed that the device performance is significantly affected by adjusting O2 ratio and RF power.
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