High Performance of Thin Film Transistor using Novel Dual Electrode Structure

Title
High Performance of Thin Film Transistor using Novel Dual Electrode Structure
Authors
조경철정유진전윤수이상렬
Issue Date
2010-10
Publisher
IMID 2010
Citation
, 108-108
Abstract
Dual electrode structure was applied to improve the preperties of a-IGZO TFT, and this structure has been demonstrated and compared to the conventional botton and top electrode structures. The threshold voltage (Vth), mobility (μFE) and subthreshold swing (S.S) values were improved compare to those of both bottom and top electrode structires. These improvements were achieved by enlarged contact area of electrodes and minimized the carrier disturbing from the interfacial defects. In the case of novel dual electrode structure, the majority current path is away from the interface, thus electrons can move through the active layer not disturbed from interfacial defects.
URI
http://pubs.kist.re.kr/handle/201004/38803
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE