High Performance of Thin Film Transistor using Novel Dual Electrode Structure
- High Performance of Thin Film Transistor using Novel Dual Electrode Structure
- 조경철; 정유진; 전윤수; 이상렬
- Issue Date
- IMID 2010
- , 108-108
- Dual electrode structure was applied to improve the preperties of a-IGZO TFT, and this structure has been demonstrated and compared to the conventional botton and top electrode structures. The threshold voltage (Vth), mobility (μFE) and subthreshold swing (S.S) values were improved compare to those of both bottom and top electrode structires. These improvements were achieved by enlarged contact area of electrodes and minimized the carrier disturbing from the interfacial defects. In the case of novel dual electrode structure, the majority current path is away from the interface, thus electrons can move through the active layer not disturbed from interfacial defects.
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.