Temperature Induced Instability of Passivation-Free Amorphous Indium Zinc Oxide (a-IZO) Thin Film Transistor
- Temperature Induced Instability of Passivation-Free Amorphous Indium Zinc Oxide (a-IZO) Thin Film Transistor
- 정유진; 전윤수; 조경철; 김승한; 정다운; 이상렬
- Issue Date
- IMID 2010
- , 149-149
- We compared the instability of the temperature and bias temperatrue stress on the electrical device of amorthous In-Zn oxide (a-IZO) thin film transistor (TFT). Thermal stress conditions were chosen from 293K to 398K, whereas the thermal activation energy can be calculated as a funtion gate voltage. And then, bias temperatue stress condition were on-current state (a drain current of 3uA at VDS = 10 V) of TFT. The thermal activation energy of the a-IZO channel layer was significantly changed by the oxygen partial pressure.
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