Temperature Induced Instability of Passivation-Free Amorphous Indium Zinc Oxide (a-IZO) Thin Film Transistor

Title
Temperature Induced Instability of Passivation-Free Amorphous Indium Zinc Oxide (a-IZO) Thin Film Transistor
Authors
정유진전윤수조경철김승한정다운이상렬
Issue Date
2010-10
Publisher
IMID 2010
Citation
, 149-149
Abstract
We compared the instability of the temperature and bias temperatrue stress on the electrical device of amorthous In-Zn oxide (a-IZO) thin film transistor (TFT). Thermal stress conditions were chosen from 293K to 398K, whereas the thermal activation energy can be calculated as a funtion gate voltage. And then, bias temperatue stress condition were on-current state (a drain current of 3uA at VDS = 10 V) of TFT. The thermal activation energy of the a-IZO channel layer was significantly changed by the oxygen partial pressure.
URI
http://pubs.kist.re.kr/handle/201004/38804
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KIST Publication > Conference Paper
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