Thermal stability of deep level defects in proton implanted CIGS solar cells

Title
Thermal stability of deep level defects in proton implanted CIGS solar cells
Authors
D.H. KimM.S. SeolD.W. KwakD.W. Lee정증현조훈영
Keywords
CIGS; solar cell; proton; defect
Issue Date
2010-09
Publisher
Electrochemical society meeting
Abstract
Thin film polycrystalline Copper indium gallium diselenide (CIGS) based solar cell devices provide high conversion efficiency and the potential of large-scale fabrication with low cost. [1] The interface and bulk traps in CIGS solar cell is one of the most important topics at the moment due to the relation with the device efficiency. Therefore, it is very important to have a clear understanding of the influence of deep level defects in CIGS films on the conversion efficiency of CIGS solar cells. And the control of bulk/interface traps in CIGS solar cell and the relations between deep level defects and cell performances should be thoroughly studied. [2] In this work, we have investigated the suppression effect on deep level defects in only annealed, proton implanted and post annealed CIGS films including deep level defects present in CIGS cell using DLTS and optical DLTS (ODLTS) measurements.
URI
http://pubs.kist.re.kr/handle/201004/38927
Appears in Collections:
KIST Publication > Conference Paper
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