Thermal stability of deep level defects in proton implanted CIGS solar cells
- Thermal stability of deep level defects in proton implanted CIGS solar cells
- D.H. Kim; M.S. Seol; D.W. Kwak; D.W. Lee; 정증현; 조훈영
- CIGS; solar cell; proton; defect
- Issue Date
- Electrochemical society meeting
- Thin film polycrystalline Copper indium gallium
diselenide (CIGS) based solar cell devices provide high
conversion efficiency and the potential of large-scale
fabrication with low cost.  The interface and bulk traps
in CIGS solar cell is one of the most important topics at
the moment due to the relation with the device efficiency.
Therefore, it is very important to have a clear
understanding of the influence of deep level defects in
CIGS films on the conversion efficiency of CIGS solar
cells. And the control of bulk/interface traps in CIGS
solar cell and the relations between deep level defects and
cell performances should be thoroughly studied. 
In this work, we have investigated the suppression
effect on deep level defects in only annealed, proton
implanted and post annealed CIGS films including deep
level defects present in CIGS cell using DLTS and optical
DLTS (ODLTS) measurements.
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