Properties ZnO Thin Films Co-doped with Hydrogen and Fluorine
- Properties ZnO Thin Films Co-doped with Hydrogen and Fluorine
- 김용현; 김진수; 정증현; 박종극; 백영준; 이경석; 성태연; 김원목
- Transparent conducting oxide; Hydrogen; Fluorine; Magnetron sputtering
- Issue Date
- ENGE 2010
- , 389-389
- ZnO films with different fluorine and hydrogen contents were prepared on Corning glass by radio
frequency magnetron sputtering of pure ZnO, ZnO-ZnF2(3 wt.%) and ZnO-ZnF2(10 wt.%) targets in
H2/Ar gas mixtures of varying H2 content, and their electrical, optical, and structural properties
together with the compositional properties of the as-grown and the vacuum-annealed films were
investigated. Small addition of H2 to sputtering gas caused a drastic increase of Hall mobility while
carrier concentration increased slightly. With further increasing H2 content, the carrier concentration
kept on increasing, but did not go over 2.1 x 1020 cm-3. On the other hand, the Hall mobility stayed at
relatively constant level. For films deposited from ZnO-ZnF2(3 wt.%) target gave the highest Hall
mobility ranging from 37 to 47 cm2/Vs. All the as-deposited films except for ZnO films without H and
F showed average transmittance higher than 85 % in 400 – 1100 nm range, and the average absorption
coefficients of most films were lower than 800 cm-1, implying very low absorption loss in these films.
The observations that the Hall mobilities of hydrogen incorporated films did not show any dependence
on full-width at half maximum values obtained from x-ray diffraction pattern, and that films without H
showed increasing Hall mobility with decreasing FWHM led to perception that H were playing an
important role in passivating the grain boundaries. Vacuum-annealing at 300 ℃ resulted in substantial
reduction of Hall mobility for the films deposited with ZnO and ZnO-ZnF2(3 wt.%) targets in H2
atmosphere while Hall mobility of the films without H increased upon annealing, supporting the
passivation effect of H in these films.
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