Analysis of Light Trapping Effects in Si Solar Cells with Textured Surface by Ray-Tracing Simulation
- Analysis of Light Trapping Effects in Si Solar Cells with Textured Surface by Ray-Tracing Simulation
- 변석주; 변석용; 이장교; 김재완; 이택성; 김원목; 조규만; 신동우; 탁성주; 김동환
- Si solar cells; Ray tracing; Texture
- Issue Date
- ENGE 2010
- , 77-77
- Various efforts have been devoted to cut down the silicon usage and to increase cell efficiency in Si
solar cells. Reducing the front surface reflectance via texturing of Si surface by applying wet chemical
etching has been proved to be one of the effective techniques achieving such purpose. Textured Si
surface by wet chemical etching is composed of three-dimensional pyramidal feature with random size
and distribution which varies with etching variants such as type of etchant, etching time and repetition
cycles. Along with the experimental adaptation of surface texturing, theoretical investigations, which
are aimed at design of optimal surface structure and/or analysis of light trapping efficiency of textured
surface, are also of practical importance. In this study, we report a theoretical investigation of the
reflected and the absorbed solar energy of textured Si solar cells, and comparative analysis with the
experimental reflectance spectra measured from the wet etched Si wafers. Three-dimensional
modeling and ray-tracing techniques were adopted for simulation of textured Si solar cells by
quantifying the average size and density of pyramidal units while fixing the total thickness of Si.
Unlike most of the previous simulation methods in which the absorbed energy is indirectly obtained
through the calculation of the reflected and the transmitted energy, the applied simulation algorithm is
based upon a non-sequential ray tracing technique, and the absorbed energy is determined directly by
applying Beer’s law at each optical path and then by integrating them. It was shown that the absorbed
solar energy was greatly dependent upon the density of pyramidal structure which affected path of
rays inside Si rather than the size of unit pyramid.
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