Realization of spin injected field effect transistor

Title
Realization of spin injected field effect transistor
Authors
장준연구현철엄종화한석희Mark Johnson
Keywords
spin transport; InAs 2DEG; nonlocal spin valve
Issue Date
2010-06
Publisher
International Symposium on Intergrated Functionalities (ISIF)
Abstract
Spintronics is a fascinating new paradigm with the potential to overcome some of the physical limitations of conventional electronics. While many types of spintronic devices have been proposed, investigated and developed, the spin injected field effect transistor (FET), (Fig. 1) a lateral semiconducting channel with two ferromagnetic electrodes, is the paradigmatic device at the cornerstone of research. This device has never been realized experimentally since it was proposed by Datta and Das (1) two decades ago because it has been tackled by two difficult challenges; one is the good spin injection into semiconductor and the other is gate control of spin precession by utilizing Rashba spin-orbit interaction. In recent work, observation of electrical spin injection and detection in a variety of semiconductors (2-5) has been promising, but the absence of empirical validation of the spin injected FET has been an outstanding problem. The unique feature of the spin FET is a result of a spin-orbit interaction intrinsic to the channel: monotonically increasing gate voltage induces precession of the injected spins and causes a periodic modulation of source-drain conductance. (Fig. 2) The electrical injection and detection of ballistic spin polarized electrons is calibrated using conventional lateral spin valve techniques. Shubnikov-de Haas (SdH) experiments provide an independent measurement of the dependence of the spin-orbit interaction on gate voltage. An oscillatory channel conductance, as a function of monotonically increasing gate voltage, is then observed. Apart from a small phase shift, the measured oscillation is fit to theory1 with no adjustable parameters. The validation of this iconic device opens spintronics to new research frontiers for low power, high performance electronics.
URI
http://pubs.kist.re.kr/handle/201004/39056
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KIST Publication > Conference Paper
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