Injection, detection and gate control of spins for spin field effect transistor
- Injection, detection and gate control of spins for spin field effect transistor
- 장준연; 구현철; 엄종화; 한석희; Mark Johnson
- spin transistor; Rashba effect; spin orbit interaction
- Issue Date
- International Conference on the Physics of Semiconductors (ICPS)
- , 170-170
- While conventional electronic devices encode information based on the presence or absence of charge, devices
based on spintronics exploit the property of electron spin instead. This has potential advantages in speed, circuit
density and power consumption, but controlling and detecting spins are challenging. Many types of spintronic
devices have been proposed, investigated and developed. A spin field effect transistor (FET) lies at the heart of
spintonic devices. It controls a spin polarized current flowing between its source and drain contacts using a voltage
applied to the gate of the device. However, despite being the subject of much interest in the research since it was
first proposed by Datta and Das two decades ago, an experimental realization of a spin FET has remained elusive.
The spin FET is a lateral semiconducting channel with ferromagnetic electrodes as source and drain, and gate
electrode in between them. (Fig. 1) Spin-polarized electrons are injected from a ferromagnetic source into a
channel. Injected electrons are polarized with direction along the magnetization of source (M1) and a fraction of
these have ballistic trajectories to the drain, which develops a voltage that is proportional to the projection of the
electron spin on the magnetization orientation of drain (M2). The channel is composed of a high mobility InAs
single quantum well heterostructure with strong spin-orbit interaction . In such a two dimensional electron gas
(2DEG), the structural asymmetry provides an intrinsic electric field. This field transforms as an effective magnetic
field which is called Rashba field, in the rest frame of the electron moving at a weakly relativistic Fermi velocity.
When the electron spin is perpendicular to the Rashba field, it precesses at the Larmor frequency and arrives at the
drain with phase θ proportional to both  and the length L of the channel. A gate voltage VG modu
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