Injection, detection and gate control of spins for spin field effect transistor

Injection, detection and gate control of spins for spin field effect transistor
장준연구현철엄종화한석희Mark Johnson
spin transistor; Rashba effect; spin orbit interaction
Issue Date
International Conference on the Physics of Semiconductors (ICPS)
, 170-170
While conventional electronic devices encode information based on the presence or absence of charge, devices based on spintronics exploit the property of electron spin instead. This has potential advantages in speed, circuit density and power consumption, but controlling and detecting spins are challenging. Many types of spintronic devices have been proposed, investigated and developed. A spin field effect transistor (FET) lies at the heart of spintonic devices. It controls a spin polarized current flowing between its source and drain contacts using a voltage applied to the gate of the device. However, despite being the subject of much interest in the research since it was first proposed by Datta and Das two decades ago, an experimental realization of a spin FET has remained elusive. The spin FET is a lateral semiconducting channel with ferromagnetic electrodes as source and drain, and gate electrode in between them. (Fig. 1) Spin-polarized electrons are injected from a ferromagnetic source into a channel. Injected electrons are polarized with direction along the magnetization of source (M1) and a fraction of these have ballistic trajectories to the drain, which develops a voltage that is proportional to the projection of the electron spin on the magnetization orientation of drain (M2). The channel is composed of a high mobility InAs single quantum well heterostructure with strong spin-orbit interaction . In such a two dimensional electron gas (2DEG), the structural asymmetry provides an intrinsic electric field. This field transforms as an effective magnetic field which is called Rashba field, in the rest frame of the electron moving at a weakly relativistic Fermi velocity. When the electron spin is perpendicular to the Rashba field, it precesses at the Larmor frequency and arrives at the drain with phase θ proportional to both  and the length L of the channel. A gate voltage VG modu
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