Gate control of spin precession in InAs heterostructure

Title
Gate control of spin precession in InAs heterostructure
Authors
장준연구현철한석희엄종화Mark Johnson
Keywords
gate control; InAs heterostructure; spin precession
Issue Date
2010-08
Publisher
SPIE Optics+Photonics
Abstract
Spin transport electronics offers additional functionality to overcome some physical limitations of conventional electronics. The spin field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. The special feature of the spin field effect transistor is the modulation of source-drain conductance controlled by gate voltage induced spin precession. We demonstrate a spin injected field effect transistor in a high mobility InAs quantum well channel, with the electrical transport of ballistic spin polarized electrons empirically calibrated. An oscillatory channel conductance, as a function of gate voltage, is detected and fit to theory.
URI
http://pubs.kist.re.kr/handle/201004/39058
Appears in Collections:
KIST Publication > Conference Paper
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