Comprehensive study on the bias and temperature induced instability of ZnO based thin film transistors

Title
Comprehensive study on the bias and temperature induced instability of ZnO based thin film transistors
Authors
이상렬정유진김승한전윤수
Issue Date
2010-08
Publisher
Changchun 2010
Abstract
We have investigated and compared the effect of the bias temperature stress (BTS) on the device instability of indium zinc oxide (IZO) and zinc tin oxide (ZTO) thin film transistors (TFTs) with bottom-gate staggered structure. Positive BTS measurements are performed by applying a drain current stress of 3 µA at VDS = 10 V to the sample for a period of 420 min at 60°C. The magnitude of threshold voltage (Vth) shift increased with the application duration of BTS, to an extent that was much larger in an IZO TFT than in a ZTO TFT. Many previous reports of ZnO-based TFTs have shown that oxygen species absorbed from air can cause a carrier concentration decrease in ZnO-based films and a positive shift in Vth and increase of sub-threshold swing (S.S). These reported phenomena can explain to our measured data after long-term BTS. It is proposed that ZTO TFT shows better stability than IZO TFT due to their relatively lower mobility.
URI
http://pubs.kist.re.kr/handle/201004/39169
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE