Effect of Hg-ambient annealing on Hg0.7Cd0.3Te thin films for IR detector

Title
Effect of Hg-ambient annealing on Hg0.7Cd0.3Te thin films for IR detector
Authors
김광천이차헌최원철김현재김진상
Keywords
HgCdTe; Hg-ambient annealing; Te-precipitation
Issue Date
2010-05
Publisher
센서학회지
Citation
VOL 19, NO 5, 398-402
Abstract
The liquid phase epitaxy(LPE) method was widely used to growth of mercury cadmium telluride(MCT) thin films. However, this method lead to Hg-vacancies in MCT thin film, because Hg has high vapor pressure at this temperature range. This is a well known defect in HgCdTe grown by LPE method. In this study, we report the development of techniques for improving the crystalline quality and controlling the composite uniformity of HgCdTe thin films using high- pressure Hg-ambient annealing method. As a result, we achieved the improvement of the composite uniformity of HgCdTe thin films. It was observed by the high angle annular dark field scanning TEM(HAADF-STEM) analysis. Moreover, new HgTe phase and a shrinking of lattice fringe were observed.
URI
http://pubs.kist.re.kr/handle/201004/39190
ISSN
1225-5475
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KIST Publication > Article
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