Electrical spin injection into moderately doped silicon enabled by tailored interfaces
- Electrical spin injection into moderately doped silicon enabled by tailored interfaces
- R. Jansen; 민병철; S.P. Dash; S. Sharma; G. Kioseoglou; A.T. Hanbicki; O.M.J.van 't Erve; P.E. Thompson; B.T. Jonker
- Issue Date
- Physical review B, Condensed matter and materials physics
- VOL 82, NO 24, 241305(R)-1-241305(R)-4
- Whereas spin injection from a ferromagnet into heavily doped Si is facilitated by tunneling through a narrow
depletion region, it is shown here that for moderately doped Si it is crucial to suppress the Schottky barrier.
Reducing carrier depletion by exposing the Si surface to a Cs flux prior to Al2O3 tunnel barrier growth, we
demonstrate spin injection by tunneling from Fe into Si (confirmed by circular polarized electroluminescence)
and achieve electrical detection (via the Hanle effect) of spin accumulation induced at room temperature in
Ni80Fe20/Al2O3 / Si junctions with 1.5X1018 cm−3 carrier density. Tailored interfaces thus enable spin injection
into moderately doped Si.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.