자장 구조 변화에 따른 High Power Impulse Magnetron Sputtering (HIPIMS)에서 Al-doped ZnO 박막 증착 특성

Title
자장 구조 변화에 따른 High Power Impulse Magnetron Sputtering (HIPIMS)에서 Al-doped ZnO 박막 증착 특성
Authors
박동희양정도최지원손영진최원국
Keywords
AZO; HIPIMS; unbalanced magnetic field; magnetron
Issue Date
2010-12
Publisher
한국재료학회지; Korean Journal of Materials Research
Citation
VOL 20, NO 12, 42-48
Abstract
In this research characteristics of Al-doped ZnO thin film by HIPIMS (High power impulse sputtering) is discussed. A deposition speed of HIPIMS is measured about 0.3 nm/min that is 30% of conventional RF sputtering process with the same working pressure. Under unbalanced magnetic field from electromagnetic coil with 1.5A coil current, deposition speed of AZO thin film is enhanced about 50% compared to that of AZO film with balanced magnetic field. AZO film sputtered by HIPIMS process shows very smooth and dense film surface where surface roughness is measured about 1 nm and no void or defect is found. Transmittance of AZO thin film is measured about 80% at 550 nm wavelength and specific resistance is measured about 2.9 × 10−2 Ω·cm. AZO film shows C-axis oriented structure and its grain size is calculated about 5.3 nm.
URI
http://pubs.kist.re.kr/handle/201004/39218
ISSN
1225-0562
Appears in Collections:
KIST Publication > Article
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