Mechanism of the Sensitivity Enhancement in TiO2 Hollow-Hemisphere Gas Sensors
- Mechanism of the Sensitivity Enhancement in TiO2 Hollow-Hemisphere Gas Sensors
- 문희규; 장호원; 김진상; 박형호; 윤석진
- TiO2; gas sensors; hollow hemispheres; surface area; sensitivity; CO
- Issue Date
- Electronic materials letters
- VOL 6, NO 4, 135-139
- We investigate the mechanism of the sensitivity enhancement in TiO2 hollow-hemisphere gas sensors. Using
monolayer close-packed polystyrene microspheres as a sacrificial template, a TiO2 thin film based on a network
of ordered hollow hemispheres is formed by room-temperature sputtering deposition and subsequent calcination
at 550°C. A thin film gas sensor based on the TiO2 hollow hemispheres exhibits a 225% change in its resistance
when exposed to 50 ppm CO at 250°C, whereas a gas sensor based on a flat TiO2 film shows an 85% change.
Numerical analysis reveals that the enhancement of the gas sensitivity in the hollow-hemisphere gas sensor
is simply the result of an increase in the effective surface area for the adsorption of gas molecules.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.