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dc.contributor.author문희규-
dc.contributor.author장호원-
dc.contributor.author김진상-
dc.contributor.author박형호-
dc.contributor.author윤석진-
dc.date.accessioned2015-12-03T00:36:12Z-
dc.date.available2015-12-03T00:36:12Z-
dc.date.issued201012-
dc.identifier.citationVOL 6, NO 4, 135-139-
dc.identifier.issn1738-8090-
dc.identifier.other34347-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/39250-
dc.description.abstractWe investigate the mechanism of the sensitivity enhancement in TiO2 hollow-hemisphere gas sensors. Using monolayer close-packed polystyrene microspheres as a sacrificial template, a TiO2 thin film based on a network of ordered hollow hemispheres is formed by room-temperature sputtering deposition and subsequent calcination at 550°C. A thin film gas sensor based on the TiO2 hollow hemispheres exhibits a 225% change in its resistance when exposed to 50 ppm CO at 250°C, whereas a gas sensor based on a flat TiO2 film shows an 85% change. Numerical analysis reveals that the enhancement of the gas sensitivity in the hollow-hemisphere gas sensor is simply the result of an increase in the effective surface area for the adsorption of gas molecules.-
dc.publisherElectronic materials letters-
dc.subjectTiO2-
dc.subjectgas sensors-
dc.subjecthollow hemispheres-
dc.subjectsurface area-
dc.subjectsensitivity-
dc.subjectCO-
dc.titleMechanism of the Sensitivity Enhancement in TiO2 Hollow-Hemisphere Gas Sensors-
dc.typeArticle-
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