Enhancement of the Memory Effects for Nonvolatile Memory Devices Fabricated Utilizing ZnO Nanoparticles Embedded in a Si3N4 Layer

Title
Enhancement of the Memory Effects for Nonvolatile Memory Devices Fabricated Utilizing ZnO Nanoparticles Embedded in a Si3N4 Layer
Authors
오도현조운조손동익김태환
Keywords
ZnO Nanoparticle; Si3N4; MONOS; Memory Effects
Issue Date
2010-05
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 10, NO 5, 3508-3511
Abstract
ZnO nanoparticles embedded in a Si3N4 layer by using spin-coating and thermal treatment were fabricated to investigate the feasible applications in charge trapping regions of the metal/oxide/nitride/oxide/p-Si memory devices. The magnitude of the flatband voltage shift of the capacitance–voltage (C–V ) curve for the Al/SiO2/ZnO nanoparticles embedded in Si3N4 layer/SiO2/p-Si memory device was larger than that of Al/ZnO nanoparticles embedded in SiO2 layer/p-Si and Al/SiO2/Si3N4/SiO2/p-Si devices. The increase in the flatband voltage shift of the C–V curve for the Al/SiO2/ZnO nanoparticles embedded in Si3N4 layer/SiO2/p-Si memory device in comparison with other devices was attributed to the existence of the ZnO nanoparticles or the interface trap states between the ZnO nanoparticles and the Si3N4 layer resulting from existence of ZnO nanoparticles embedded in the Si3N4 layer.
URI
http://pubs.kist.re.kr/handle/201004/39285
ISSN
1533-4880
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE