Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor

Title
Fabrication and Characterization of an Enhancement-Mode Planar Resonant Tunneling Transistor
Authors
손승훈황성우안도열이정일YoungJu ParkYunSeop Yu
Keywords
Enhancement mode; Fock?arwin states; inplane gates (IPGs); resonant tunneling
Issue Date
2010-01
Publisher
IEEE transactions on nanotechnology
Citation
VOL 9, NO 1, 123-127
Abstract
We report the fabrication and characterization of a planar resonant tunneling transistor (PRTT) using a GaAs/AlGaAs heterostructure wafer. Our PRTT operates as an enhancementmode device, and shows the negative differential resistance (NDR) modulated with the gate bias in an extremely wide range (from the fully depleted dot to the dot in a single-electron transistor regime). ThisNDRspectrum represents a full, gate-bias-modulated evolution of the 0-D states in a quantum dot. Our data are also consistent with the ground (E1) and the first excited state (E2) of the Fock–Darwin states.
URI
http://pubs.kist.re.kr/handle/201004/39287
ISSN
1536-125X
Appears in Collections:
KIST Publication > Article
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