Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

Title
Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films
Authors
조경훈최창학최주영성태근남산강종윤윤석진김종희
Keywords
Films; Capacitors; Bi5Nb3O15; Leakage current density
Issue Date
2010-01
Publisher
Journal of the European Ceramic Society
Citation
VOL 30, NO 2, 513-516
Abstract
The effect of oxygen partial pressure (OPP) on the leakage current density of Bi5Nb3O15 (B5N3) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B5N3 film. Schottky emission was postulated as the leakage current mechanism of the B5N3 films. The barrier height between the Pt electrode and the B5N3 film grown under a high OPP of 5.1mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7mTorr due to the presence of the oxygen vacancy.
URI
http://pubs.kist.re.kr/handle/201004/39300
ISSN
0955-2219
Appears in Collections:
KIST Publication > Article
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