Role of silicon in silicon-indium-zinc-oxide thin-film transistor

Title
Role of silicon in silicon-indium-zinc-oxide thin-film transistor
Authors
정유진김승한이상렬
Keywords
amorphous semiconductors; annealing; indium compounds
Issue Date
2010-12
Publisher
Applied physics letters
Citation
VOL 97, NO 25, 252112-1-252112-3
Abstract
Silicon effect on the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films has been investigated for thin-film transistor applications depending on composition ratio and annealing-temperature. X-ray diffraction, x-ray photoelectron spectroscopy, and time-of-flight secondary-ion-mass-spectrometry have been used to characterize the properties of SIZO thin-film channel layer with different Si concentrations and annealing-temperatures. Those results revealed that Si is more strongly binding with oxygen since their high metal-oxygen bonding-strength and low standard electric potential, which result in implying Si, allow the amorphous oxide semiconductors to achieve oxide-lattice structures even at a low-temperature of 150 °C.
URI
http://pubs.kist.re.kr/handle/201004/39334
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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