Role of silicon in silicon-indium-zinc-oxide thin-film transistor
- Role of silicon in silicon-indium-zinc-oxide thin-film transistor
- 정유진; 김승한; 이상렬
- amorphous semiconductors; annealing; indium compounds
- Issue Date
- Applied physics letters
- VOL 97, NO 25, 252112-1-252112-3
- Silicon effect on the performance of amorphous silicon-indium-zinc-oxide (a-SIZO) films has been investigated for thin-film transistor applications depending on composition ratio and annealing-temperature. X-ray diffraction, x-ray photoelectron spectroscopy, and time-of-flight secondary-ion-mass-spectrometry have been used to characterize the properties of SIZO thin-film channel layer with different Si concentrations and annealing-temperatures. Those results revealed that Si is more strongly binding with oxygen since their high metal-oxygen bonding-strength and low standard electric potential, which result in implying Si, allow the amorphous oxide semiconductors to achieve oxide-lattice structures even at a low-temperature of 150 °C.
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