Gate modulation of spin precession in a semiconductor channel

Title
Gate modulation of spin precession in a semiconductor channel
Authors
구현철권재현엄종화장준연한석희M. Johnson
Keywords
gate modulation; spin precession; semiconductor channel
Issue Date
2011-02
Publisher
Journal of physics D, applied physics
Citation
VOL 44, 064006-1-064006-7
Abstract
Gate control of spin precession is experimentally presented in an InAs quantum well with ferromagnetic spin injector and detector. The gate electric field modulates the spin–orbit interaction and spin precession. As a consequence, spin dependent conductance in the InAs channel is controlled by the gate voltage. Using ballistic spin transport theory, gate modulation results are proved to fit very well with gate voltage dependence of Rashba field strength.
URI
http://pubs.kist.re.kr/handle/201004/39397
ISSN
0022-3727
Appears in Collections:
KIST Publication > Article
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