Effect of reactive gas of fluorides on Si etching by using ICP-RIE

Title
Effect of reactive gas of fluorides on Si etching by using ICP-RIE
Authors
김상헌정성목김영환
Keywords
실리콘 나노선; ICP-RIE; 수직 식각
Issue Date
2009-08
Publisher
한국진공학회 제34회 정기학술대회
Citation
, 246-246
URI
http://pubs.kist.re.kr/handle/201004/39415
Appears in Collections:
KIST Publication > Conference Paper
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