Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations
- Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations
- 장호원; D. A. Felker; C. W. Bark; Y. Wang; M. K. Niranjan; C. T. Nelson; Y. Zhang; D. Su; C. M. Folkman; S. H. Baek; S. Lee; K. Janicka; Y. Zhu; X. Q. Pan; D. D. Fong; E. Y. Tsymbal; M. S. Rzchowski; C. B. Eom
- 2DEG; oxide interfaces; electronic correlations; rare-earth oxide; strontium titanate
- Issue Date
- VOL 331, 886-889
- ﻿The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly
influenced by the oxide electronic properties. We investigated how local electron correlations
control the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) [(R is lanthanum
(La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y)] into an epitaxial
strontium titanate oxide (SrTiO3) matrix using pulsed-laser deposition with atomic layer control.
We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted
layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and
theoretical results indicate that the interfacial conductivity is dependent on electronic
correlations that decay spatially into the SrTiO3 matrix. Such correlation effects can lead to
new functionalities in designed heterostructures.
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