Wafer-Scale Growth of ITO Nanorods by Radio Frequency Magnetron Sputtering Deposition
- Wafer-Scale Growth of ITO Nanorods by Radio Frequency Magnetron Sputtering Deposition
- 박재형; Hoo Keun Park; Jinhoo Jeong; Woong Kim; 민병권; 도영락
- ITO; nanorods; sputtering
- Issue Date
- Journal of the Electrochemical Society
- VOL 158, NO 5, K131-K135
- We demonstrate synthesis of tin-doped indium oxide (ITO) nanorods on 2-in. glass wafers via radio frequency (rf)-magnetron
sputtering deposition. The nanorods possessed a single-crystal structure of bixbyite, grew along the <100> orientation of the cubic
unit cell, and were vertically aligned to the substrates. Height and diameter of the nanorods were as large as ~810 nm and 40–100
nm, respectively. The morphological, structural, compositional, optical, and electrical properties of the ITO nanorods were examined
with respect to growth temperature (25–500 ℃) and growth time (10–60 min). ITO nanorod films synthesized at 500 ℃ exhibited
excellent electrical and optical property such as a low sheet resistance (~41 Ω/□) and high transparency in the wavelength
range of visible light (i.e., ~87% transmission at 550 nm). The facile approach to synthesize ITO nanorods at a large scale demonstrated
in this work may find various applications including the fabrication of high performance optoelectronic devices.
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