Wafer-Scale Growth of ITO Nanorods by Radio Frequency Magnetron Sputtering Deposition

Title
Wafer-Scale Growth of ITO Nanorods by Radio Frequency Magnetron Sputtering Deposition
Authors
박재형Hoo Keun ParkJinhoo JeongWoong Kim민병권도영락
Keywords
ITO; nanorods; sputtering
Issue Date
2011-03
Publisher
Journal of the Electrochemical Society
Citation
VOL 158, NO 5, K131-K135
Abstract
We demonstrate synthesis of tin-doped indium oxide (ITO) nanorods on 2-in. glass wafers via radio frequency (rf)-magnetron sputtering deposition. The nanorods possessed a single-crystal structure of bixbyite, grew along the <100> orientation of the cubic unit cell, and were vertically aligned to the substrates. Height and diameter of the nanorods were as large as ~810 nm and 40&#8211;100 nm, respectively. The morphological, structural, compositional, optical, and electrical properties of the ITO nanorods were examined with respect to growth temperature (25&#8211;500 ℃) and growth time (10&#8211;60 min). ITO nanorod films synthesized at 500 ℃ exhibited excellent electrical and optical property such as a low sheet resistance (~41 Ω/□) and high transparency in the wavelength range of visible light (i.e., ~87% transmission at 550 nm). The facile approach to synthesize ITO nanorods at a large scale demonstrated in this work may find various applications including the fabrication of high performance optoelectronic devices.
URI
http://pubs.kist.re.kr/handle/201004/39526
ISSN
0013-4651
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KIST Publication > Article
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