Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

Title
Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor
Authors
이상렬김도형정유진정용우김대환
Keywords
amorphous oxide semiconductor; threshold voltage; densito of state; a-IGZO
Issue Date
2011-03
Publisher
Applied physics letters
Citation
VOL 98, NO 12, 122105-1-122105-3
Abstract
We report on the origin of threshold voltage shift with the thickness of amorphous InGaZnO channel layer deposited by rf magnetron sputter at room temperature, using density of states extracted from multi frequency method and falling rates of activation energy, which of trends are entirely consistent each other in respect of the reduction of total traps with increasing the channel thickness. Furthermore, we shows that the behavior of △Vth under the positive gate bias stress and thermal stress can be explained by charge trapping mechanism based on total trap variation.
URI
http://pubs.kist.re.kr/handle/201004/39537
ISSN
0003-6951
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KIST Publication > Article
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