Deposition of Nanocrystalline Bi2Te3 Films Using a Modified MOCVD System
- Deposition of Nanocrystalline Bi2Te3 Films Using a Modified MOCVD System
- 유현우; 배성환; 김종만; 김진상; 박찬
- MOCVD; Bi2Te3; Thermoelectric; nanocrystallite
- Issue Date
- Journal of electronic materials
- VOL 40, NO 5, 635-640
- Nanocrystalline Bi2Te3 films were deposited on (100) GaAs substrates using a
modified metalorganic chemical vapor deposition (MOCVD) system, and the
effect of growth parameters on the structural properties were investigated.
The modified MOCVD system employed a mixing room for the formation of
nanoparticles of Bi2Te3 by gas-phase reaction and a graphite susceptor for
growth of nanoparticles on the substrate. The grown films contained many
crystallites of nanosize, and large crystallites consisted of small particles a
few tens of nanometer in size. This nanostructured film approach can be an
economical way of producing high-performance thermoelectric films with
nanostructure compared with other top-down methods.
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