Effect of gallium contents on the threshold voltage shift of solution-processed Ga-doped Si-In-Zn-O thin film transistor

Title
Effect of gallium contents on the threshold voltage shift of solution-processed Ga-doped Si-In-Zn-O thin film transistor
Authors
최준영박기호전윤수김상식이상렬
Issue Date
2011-03
Publisher
7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics
URI
http://pubs.kist.re.kr/handle/201004/39694
Appears in Collections:
KIST Publication > Conference Paper
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