Change of interfacial properties and trap density in amorphous InGaZnO thin film transistor depending on different rf power of sputtering

Title
Change of interfacial properties and trap density in amorphous InGaZnO thin film transistor depending on different rf power of sputtering
Authors
김보슬김도형이상렬
Issue Date
2011-03
Publisher
7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics
URI
http://pubs.kist.re.kr/handle/201004/39697
Appears in Collections:
KIST Publication > Conference Paper
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