Thermoelectric Properties of Bi2Te3 Films Grown by Modified MOCVD with Substrate Temperatures
- Thermoelectric Properties of Bi2Te3 Films Grown by Modified MOCVD with Substrate Temperatures
- 유현우; 권오정; 김광천; 최원철; 박찬; 김진상
- Metal organic chemical vapor deposition (MOCVD; Bismuth telluride (Bi2Te3); Substrate temperature; Growth mechanism; Thermoelectric
- Issue Date
- 전기전자재료학회논문지 (Journal of KIEEME)
- VOL 24, NO 4, 340-344
- Thermoelectric bismuth telluride (Bi2Te3) films were deposited on 4° off oriented (001) GaAs substrates
using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on
surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two
dimensional growth mode (2D) was observed at substrate temperature lower than 400℃. However, three
dimensional growth mode (3D) was observed at substrate temperature higher than 400℃. Change of growth
mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray
diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that Bi2Te3 films
grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 μV/K and the power
factor was 1.86×10-3 W/mK2 at the substrate temperature of 400℃. Bi2Te3 films deposited using modified MOCVD
can be used to fabricate high-performance thermoelectric devices.
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