Thermoelectric Properties of Bi2Te3 Films Grown by Modified MOCVD with Substrate Temperatures

Title
Thermoelectric Properties of Bi2Te3 Films Grown by Modified MOCVD with Substrate Temperatures
Authors
유현우권오정김광천최원철박찬김진상
Keywords
Metal organic chemical vapor deposition (MOCVD; Bismuth telluride (Bi2Te3); Substrate temperature; Growth mechanism; Thermoelectric
Issue Date
2011-04
Publisher
전기전자재료학회논문지 (Journal of KIEEME)
Citation
VOL 24, NO 4, 340-344
Abstract
Thermoelectric bismuth telluride (Bi2Te3) films were deposited on 4° off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than 400℃. However, three dimensional growth mode (3D) was observed at substrate temperature higher than 400℃. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that Bi2Te3 films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 μV/K and the power factor was 1.86×10-3 W/mK2 at the substrate temperature of 400℃. Bi2Te3 films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.
URI
http://pubs.kist.re.kr/handle/201004/39728
ISSN
1226-7945
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KIST Publication > Article
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