Gate controlled spin-orbit coupling in InAs-inserted quantum well structure

Title
Gate controlled spin-orbit coupling in InAs-inserted quantum well structure
Authors
김경호박윤호구현철장준연김형준김영근
Issue Date
2011-05
Publisher
The 22nd International Conference on Molecular Electronics and Devices
Abstract
In conclusion, we have investigated the variation of Rashba SOC constant (α) with respect to Vg in two different QW structures of In0.53Ga0.47As and InAs-inserted QW structures. By inserting the NGS InAs QW layer, dα/dns is three times increased compared to the In0.53Ga0.47As QW. Moreover, the InAs-inserted QW structure shows higher µ with low channel resistance. We conclude that, from our experimental results, the InAs-inseted QW structure has much stronger SOC and better contact resistance for the spin-FET applications.
URI
http://pubs.kist.re.kr/handle/201004/39766
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE