The Effect of Surface Manipulation of Mo Back Contact on Controlling Cu(In,Ga)Se2 (CIGS) Preferred orientation and the Demonstration of Their Effects on Cell Efficiency
- The Effect of Surface Manipulation of Mo Back Contact on Controlling Cu(In,Ga)Se2 (CIGS) Preferred orientation and the Demonstration of Their Effects on Cell Efficiency
- 윤주헌; 성태연; 김종근; 윤관희; 김원목; 박종극; 백영준; 정증현
- CIGS; Back Contact; Preferred Orientation; Efficiency
- Issue Date
- Materials Research Society
- The effect of surface density of Molybdenum (Mo) back contact on controlling the preferred
orientation of Cu(In,Ga)Se2 (CIGS) films was investigated using two different layered-Mo
structures: one is the relatively less dense and thin Mo layer deposited on very dense and
thick Mo layer and the other is a single layer of thick dense Mo. The (112) texture typically
shown in CIGS films on a single dense Mo layer was changed significantly into (220)/(204)
texture of CIGS on the layered Mo (with less dense top Mo layer). It is strong evidence
showing that surface density of Mo back contact determines the CIGS preferred orientation.
Herein we suggest a novel Mo layered structure as a back contact comprising of the less
dense thin layer on bi-layer. The top layer is for controlling the CIGS preferred orientation
and the bottom bi-layer for guaranteeing the thermal stability of highly conductive back
contact during high-temperature CIGS process. Using such a more practical structure as
described above, the effect of CIGS preferred orientation on cell performances, (at least
excluding other effect such as Mo degradation) could be investigated fairly by just changing
the nature of the top Mo layer. The efficiency of CIGS solar cells made on the layered Mo
structures as a function of the deposition pressure of top layer Mo (2~16 mTorr) depends
strongly on CIGS (220)/(204) preferred orientation: Open-circuit voltage (Voc) was increased
with increasing (220)/(204) texture. It was attributed to the decrease of ideality factor (n) with
CIGS (220)/(204) texture. In addition, the slightly decrease of series resistance (Rs) and
optical band gap was observed with increasing CIGS (220)/(204) preferred orientation.
- Appears in Collections:
- KIST Publication > Conference Paper
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.