Domain Wall Motion of Ferroelectric Material under a Bias in TEM

Domain Wall Motion of Ferroelectric Material under a Bias in TEM
장혜정S.V. KalininP. WuS.Y. YangP. YuR. RameshL.Q. ChenS.J. PennycookA. Borisevich
ferroelectric; In situ TEM; domain switching; BFO
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In this study stable polarization switching behavior in BiFeO3 films grown on a SrTiO3 substrate with a bottom electrode layer of SrRuO3 is investigated. The domain nucleation and growth occur almost instantaneously when the bias is applied unlikely the metastable switching in ref.[1]. 71º domain walls are aligned with the (001) plane of the substrate with the angle close to 45º to minimize elastic energy in the film. With the bias, the 71º domain walls move or disappear thus merging the domains nearby. During the switching they keep the pattern direction even with some tilt regardless of the bias sign. However, the domain walls are aligned to the opposite direction when the bias sign changes; positive to negative or negative to positive. This first experimental observation which is allowed due to the in situ biasing to the cross section plane of the film in TEM resulted in the theoretical consideration of the domain wall energy upon the bias sign and simulation by phase field model. In addition the spatial resolution of TEM allows imaging the effect of defect in the film. Defects such as dislocation pins the movement of the domain wall thus delay the domain growth. Furthermore it was observed that the energetically non-stable defect area act as a preferred domain nucleation site.
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