Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

Title
Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
Authors
박지호아키히로 와카하라히로시 오카다히로토 세키구치아제이 티와리김용태송종한이종한신중건
Keywords
PAMBE; Eu-doped GaN; Luminescence; BEP
Issue Date
2011-03
Publisher
Japanese journal of applied physics
Citation
VOL 50, NO 3, 031003-1-031003-5
Abstract
The growth mode of europium (Eu)-doped GaN epitaxial films grown on a GaN template by rf plasma-assisted molecular beam epitaxy (PAMBE) was investigated with different III/V ratios under a constant Eu beam equivalent pressure ratio [PEu/(PEu + PGa)]. The reflection high-energy electron diffraction (RHEED) patterns and atomic force microscopy (AFM) images revealed the transition of the growth mode from threedimensional (3D) to step-flow/two-dimensional (2D) by increasing the III/V ratio. When the films were grown in the 3D growth mode, Eu concentrations estimated by Rutherford backscattering spectrometry/channeling (RBS/channeling) were almost constant, although the III/V ratios varied. However, when the growth mode was transferred from 3D to step-flow/2D, precipitates on the surface abruptly increased while the Eu concentration abruptly decreased, indicating the abrupt degradation of Eu-incorporation in the film. Luminescence sites of Eu3+ were sensitive to the III/V ratio, and Eu atoms have different luminescence sites in both growth modes. Furthermore, luminescence efficiency abruptly increased when the growth mode was transferred from 3D to step-flow/2D.
URI
http://pubs.kist.re.kr/handle/201004/39845
ISSN
0021-4922
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