Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
- Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy
- 박지호; 아키히로 와카하라; 히로시 오카다; 히로토 세키구치; 아제이 티와리; 김용태; 송종한; 이종한; 신중건
- PAMBE; Eu-doped GaN; Luminescence; BEP
- Issue Date
- Japanese journal of applied physics
- VOL 50, NO 3, 031003-1-031003-5
- The growth mode of europium (Eu)-doped GaN epitaxial films grown on a GaN template by rf plasma-assisted molecular beam epitaxy (PAMBE)
was investigated with different III/V ratios under a constant Eu beam equivalent pressure ratio [PEu/(PEu + PGa)]. The reflection high-energy
electron diffraction (RHEED) patterns and atomic force microscopy (AFM) images revealed the transition of the growth mode from threedimensional
(3D) to step-flow/two-dimensional (2D) by increasing the III/V ratio. When the films were grown in the 3D growth mode, Eu
concentrations estimated by Rutherford backscattering spectrometry/channeling (RBS/channeling) were almost constant, although the III/V
ratios varied. However, when the growth mode was transferred from 3D to step-flow/2D, precipitates on the surface abruptly increased while the
Eu concentration abruptly decreased, indicating the abrupt degradation of Eu-incorporation in the film. Luminescence sites of Eu3+ were sensitive
to the III/V ratio, and Eu atoms have different luminescence sites in both growth modes. Furthermore, luminescence efficiency abruptly increased
when the growth mode was transferred from 3D to step-flow/2D.
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