Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature

Title
Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature
Authors
전윤수장성필이상렬
Keywords
a-IGZO; Thin film transistor; SiO2; HfO2; High-k
Issue Date
2011-07
Publisher
Microelectronic engineering
Citation
VOL 88, NO 7, 1590-1593
Abstract
Effects of gate insulators for oxide TFTs have been investigated by two types of a-IGZO TFTs with high-k and low-k oxides. TFTs with low-k oxides have low on-current due to the low-capacitances of the materials. HfO2 has been used as high-k gate insulator, because HfO2 is one of most promising high-k oxides with the high capacitance due to its high dielectric constant. We have fabricated a-IGZO TFTs with SiO2 and HfO2. And their performances are compared, such as mobility, threshold voltage, subthreshold swing, on-to-off current ratio, hysteresis, and bias-sensitivity. TFT with HfO2 gate insulator shows better performances than those of TFT with SiO2 gate insulator.
URI
http://pubs.kist.re.kr/handle/201004/39871
ISSN
0167-9317
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KIST Publication > Article
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