Growth and characterization of low density droplet GaAs quantum dots for single photon sources

Title
Growth and characterization of low density droplet GaAs quantum dots for single photon sources
Authors
하승규송진동임주영S. BounouarF. DonatiniL. S. DangJ. P. PoizatJ. S. Kim최원준한일기이정일
Keywords
droplet epitaxy; quantum dot; micro-photoluminescence; cathodoluminescence; single photon sources; exciton; biexciton
Issue Date
2011-01
Publisher
SPIE photonic west 2011
Citation
VOL 7945, 79452H-1-79452H-9
Abstract
We have grown GaAs quantum dots (QDs) in Al0.3Ga0.7As matrix by droplet epitaxy for application in single photon sources. This growth method enables the formation of QDs without strain, with emission wavelengths of around 700 nm within the optimal detection range of cost effective silicon detector, and with reduced surface density of several tens to a few QDs per μ㎡ for easier isolation of single QDs. The optical properties of QDs were envisaged by exciton and biexciton emission peaks identified from power dependent and time-resolved micro-photoluminescence (μ-PL) measurements. The possibility of fabricating photonic crystal (PC) resonator including a single QD was shown by obtaining precise spectral and spatial information from a few QDs in a mesa structure, utilizing cathodoluminescence (CL) measurements.
URI
http://pubs.kist.re.kr/handle/201004/39904
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KIST Publication > Conference Paper
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