Crystalline Ge quantum dots embedded in SiO2 matrix synthesized by plasma immersion ion implantation

Title
Crystalline Ge quantum dots embedded in SiO2 matrix synthesized by plasma immersion ion implantation
Authors
전준홍최진영박원웅문선우박경원임상호한승희
Keywords
germanium; quantum dot; ion implantation; PIII
Issue Date
2011-07
Publisher
Nanotechnology
Citation
VOL 22, NO 28, 285605-1-285605-6
Abstract
A new plasma process, i.e. a combination of plasma immersion ion implantation and deposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developed to implant non-gaseous ions into material surfaces. The new process has the great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this study, Ge ions were successfully implanted into SiO2 thin film, which resulted in uniformly and homogeneously distributed crystalline Ge quantum dots (Ge-QDs) embedded in a SiO2 matrix even without a further annealing process. Broader areas of application of PIII&D technology are envisaged with this newly developed process.
URI
http://pubs.kist.re.kr/handle/201004/39943
ISSN
0957-4484
Appears in Collections:
KIST Publication > Article
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