Crystallization of BST Thin Film by Excimer Laser Annealing Method for Embedded Capacitors

Title
Crystallization of BST Thin Film by Excimer Laser Annealing Method for Embedded Capacitors
Authors
강민규도영호오승민강종윤남산윤석진
Keywords
Excimer laser annealing; BST; thin film; low temperature
Issue Date
2011-04
Publisher
2011 MRS SPRING MEETING
Abstract
Current heat processes available for crystallization of BST thin films are not compatible with current packages because they require high processing temperatures while the current packages are predominantly organic based with maximum processing temperatures limited to 350℃. Excimer laser annealing (ELA) is attractive heat process for the lowtemperature crystallization, because of its material selectivity and the short heating time. The amorphous BST thin films were deposited on Pt/Ti/SiO2/Si substrate by sol-gel method at 300oC. Finally, the ELA was carried out with various conditions as function of the applied laser energy density, the number of pulse and the repetition rate. The XRD, SEM and TEM were used to analyze the structural characteristics. The leakage current, dielectric constant, dielectric loss and RF characteristics were measured by I-V meter, impedance analyzer and network analyzer. The crystallinity of the excimer laser annealed BST thin films was observed however, partially amorphous layer was remained in the interface between the BST thin film and the bottom electrode. The film thickness, laser energy density and number of pulse were considered in order to reduce the amorphous layer and optimize the ELA condition. As a result, we obtained crystallized BST thin film which has 187 of permittivity, 0.011 of dielectric loss and 0.9 μA/cm2 of leakage current below 300 ℃.
URI
http://pubs.kist.re.kr/handle/201004/40024
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KIST Publication > Conference Paper
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