Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system

Title
Electrical spin accumulation with improved bias voltage dependence in a crystalline CoFe/MgO/Si system
Authors
전건록민병철신일재박창엽이헌성조영훈신성철
Issue Date
2011-06
Publisher
Applied physics letters
Citation
VOL 98, NO 26, 262102-1-262102-3
Abstract
We report the electrical spin accumulation with enhanced bias voltage dependence in n-type Si, employing a crystalline CoFe/MgO tunnel contact. A sizable spin signal of ~4.8 kΩ μ㎡, a spin lifetime of ~155 ps, and a spin diffusion length of ~220 nm were obtained at 300 K. The spin signal and lifetime obtained in this system show consistent behavior with the temperature variation irrespective of the bias voltage. Notably, the spin signal exhibits nearly symmetric dependence with respect to the bias polarity, which is ascribed to the improved bias dependence of tunnel spin polarization.
URI
http://pubs.kist.re.kr/handle/201004/40030
ISSN
0003-6951
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KIST Publication > Article
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