Zinc-blende GaAs nanowire growth by catalyst-free migration enhanced epitaxy

Title
Zinc-blende GaAs nanowire growth by catalyst-free migration enhanced epitaxy
Authors
이은혜송진동김수연박태언한일기장수경이정일
Issue Date
2011-07
Publisher
15th International Symposium on the Physics of Semiconductors and Applications (ISPSA)
Abstract
-We used two ways to grow nanowires; 1. Ga pre-injection and 2. As pulse injection (MEE) with continuous Ga introduction at initial growth state -MEE growth is a method to finely tune Arsenic flux and also Arsenic injection time. -GaAs nanowires with MEE GaAs (Gat/Ast = 3) injection at the initial growth time were larger at the diameter and longer at the length than nanowires with only Ga source injection. -A GaAs nanowire with GaAs (Gat/Ast = 1) growth for 1hr after MEE GaAs (Gat/Ast = 3) injection at the initial growth time showed a zincblende structure as the whole.
URI
http://pubs.kist.re.kr/handle/201004/40121
Appears in Collections:
KIST Publication > Conference Paper
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