INDIUM ANTIMONY NANOSTRUCTURE GROWN BY MIGRATION ENHANCED MOLECULAR BEAM EPITAXY

Title
INDIUM ANTIMONY NANOSTRUCTURE GROWN BY MIGRATION ENHANCED MOLECULAR BEAM EPITAXY
Authors
이은혜송진동김수연배민환한일기장수경이정일
Issue Date
2011-07
Publisher
The 2011 International Forum on Functional Materials (IFFM2011)
Abstract
Type Ⅱ semiconductor nanostructures have attracted much attention in the optoelectronic device application, especially on the infrared (IR) detector, due to their staggered band alignment. Since the band structure could be varied by this staggered band alignment, it is possible to control the cutoff wavelength on the IR detector. InSb/InAs quantum dot is a representative type Ⅱ quantum structure in the mid-infrared range. Recently, a study on mid-infrared photodetectors modified with InSb/InAsSb quantum structures have been reported.[1] InSb quantum dots with a bound hole state in this report play a role to extend the wavelength of the detector. However, it is not cost-effective because the detector has been grown on GaSb wafer. It is not commercially available to acquire large area GaSb substrates for the mass-production of IR sensors, either. Since GaAs wafer has a merit of being applicable to the large area, it would be valuable in terms of productivity. InSb/InAsSb quantum dots were formed on (100) GaAs wafer by molecular beam epitaxy. 1 μm-AlSb and 1 μm-InAsSb were grown as a buffer layer on GaAs to overcome large lattice mismatch between GaAs and InSb material. Multilayered InSb quantum dots were formed with 400Å InAsSb spacers. Migration enhanced epitaxy method was used to fabricate InSb quantum dots on InAsSb, because this method helps formation of InSb/InAsSb quantum dots under approximately less than 6% lattice mismatch system. We observed InSb/InAsSb quantum structures on the AFM image. Finally, the optical properties in InSb/InAsSb quantum structures are going to be investigated.
URI
http://pubs.kist.re.kr/handle/201004/40130
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