Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe

Title
Multi-level cell storage with a modulated current method for phase-change memory using Ge-doped SbTe
Authors
장강우철정증현정두석유원종정병기
Keywords
Multi-level cell; phase-change memory; Ge-doped SbTe
Issue Date
2011-03
Publisher
Current applied physics
Citation
VOL 11, NO 2, e79-e81
Abstract
We demonstrate a high-speed multi-level cell (MLC) storage for the phase-change memory using a Gedoped SbTe (GeST) for the first time with a conventional pore-type device structure and a conventional modulated-current writing method. The GeST was selected to have a low Sb-to-Te ratio of 1.8 (GeSTL), rendering a diminished growth rate relative to the case of a high Sb-to-Te ratio typically of fast, growthdominated crystallization. With a writing time of less than 100 ns, each of the 4 resistance levels separated from one another at least by the factor of 4 is shown to form reliably and stay with a low drift coefficient of ~0.1. GeSTL may be regarded as a promising material for high-speed MLC phase-change memory application.
URI
http://pubs.kist.re.kr/handle/201004/40167
ISSN
1567-1739
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KIST Publication > Article
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